Author(s)

C Weichmann, J Nitschkowski, K-H Hoffmann & A Voigt

Abstract

We present simulations of a crystal growth process in a Si Czochralski furnace. In these simulations heat radiation, convective heat transfer and heat conduction are taken in account. The free interface between melt and crystal as well as the free capillary boundary between melt and gas are considered. The results are compared for time dependent simulations, taking account of the growing of the crystal, and quasi steady simulations at various time steps.

Keywords