Author(s)

R. Cerny & P. Pfrkryl

Abstract

The phase transitions in thin layers of amorphous silicon on the quartz sub- strate caused by pulsed-laser irradiation are studied as a four-phase moving boundary problem with three moving boundaries using a nonequilibrium thermal model. Three phases, namely the liquid silicon (1-Si), the polycrys- talline silicon (pc-Si), and amorphous silicon (a-Si) are treated explicitly, and the fourth phase, Si vapor, is included in the boundary conditions for 1- Si. The numerical solution is performed using the Landau transformations, Galerkin finite element method and successive approximation approach with underrelaxation. In a practical applic

Keywords